The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Mar. 27, 2012
Stefan Harrer, New York, NY (US);
Stanislav Polonsky, Putnam Valley, NY (US);
Mark B. Ketchen, Hadley, MA (US);
John A. Ott, Greenwood Lake, NY (US);
Stefan Harrer, New York, NY (US);
Stanislav Polonsky, Putnam Valley, NY (US);
Mark B. Ketchen, Hadley, MA (US);
John A. Ott, Greenwood Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.