The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Jul. 01, 2010
Daisuke Matsushita, Hiratsuka, JP;
Koichi Muraoka, Sagamihara, JP;
Koichi Kato, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Yuichiro Mitani, Kanagawa-Ken, JP;
Daisuke Matsushita, Hiratsuka, JP;
Koichi Muraoka, Sagamihara, JP;
Koichi Kato, Yokohama, JP;
Yasushi Nakasaki, Yokohama, JP;
Yuichiro Mitani, Kanagawa-Ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.