The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Dec. 03, 2011
Guowen Ding, San Jose, CA (US);
Mohd Fadzli Anwar Hassan, San Francisco, CA (US);
Hien Minh Huu Le, San Jose, CA (US);
Zhi-wen Sun, San Jose, CA (US);
Guowen Ding, San Jose, CA (US);
Mohd Fadzli Anwar Hassan, San Francisco, CA (US);
Hien Minh Huu Le, San Jose, CA (US);
Zhi-Wen Sun, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.