The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Mar. 09, 2012
Jia-guei Jou, Taipei, TW;
Kuan-chi Chen, Hsinchu, TW;
Peng-ren Chen, Hsinchu, TW;
Dong-hsu Cheng, Tainan, TW;
Jia-Guei Jou, Taipei, TW;
Kuan-Chi Chen, Hsinchu, TW;
Peng-Ren Chen, Hsinchu, TW;
Dong-Hsu Cheng, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of making a mask includes receiving an IC design layout from a designer, applying an logic operation (LOP) correction, performing an OPC correction, fracturing the modified data into a plurality of main features in an electron beam format, and sending the electron beam format data to a mask writer for a mask fabrication. An XOR operation is implemented into the method to check and verify if a pattern is lost during OPC modification and/or data fracture. A BACKBONE XOR operation is also implemented into the method for a plurality of main features with a critical dimension (CD) size smaller than the max OPC correction to check and verify if a small pattern feature is lost during OPC modification and/or data fracture for 45 nm and beyond semiconductor technologies.