The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Nov. 24, 2010
Honglin Zhu, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Hicham M. Sougrati, Burlingame, CA (US);
Quang Le, San Jose, CA (US);
Jui-lung LI, San Jose, CA (US);
Chando Park, Palo Alto, CA (US);
Honglin Zhu, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Hicham M. Sougrati, Burlingame, CA (US);
Quang Le, San Jose, CA (US);
Jui-Lung Li, San Jose, CA (US);
Chando Park, Palo Alto, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.