The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Nov. 29, 2011
Applicants:
Won Chul DO, Kyunggi-do, KR;
Yong Jae Ko, Gwangju, KR;
Inventors:
Won Chul Do, Kyunggi-do, KR;
Yong Jae Ko, Gwangju, KR;
Assignee:
Amkor Technology, Inc., Chandler, AZ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.