The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
May. 08, 2012
Udrea Florin, Cambridge, GB;
Julian Gardner, Kineton, GB;
Syed Zeeshan Ali, Cambridge, GB;
Mohamed Foysol Chowdhury, Milton, GB;
Ilie Poenaru, Cambridge, GB;
Udrea Florin, Cambridge, GB;
Julian Gardner, Kineton, GB;
Syed Zeeshan Ali, Cambridge, GB;
Mohamed Foysol Chowdhury, Milton, GB;
Ilie Poenaru, Cambridge, GB;
Cambridge CMOS Sensors Limited, Cambridge, GB;
Abstract
An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.