The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Apr. 09, 2008
Kyle P. Hunt, Richardson, TX (US);
Leila Elvira Noriega, Forney, TX (US);
Billy Alan Wofford, Dallas, TX (US);
Asadd M. Hosein, Plano, TX (US);
Binghua HU, Plano, TX (US);
Xinfen Chen, Plano, TX (US);
Kyle P. Hunt, Richardson, TX (US);
Leila Elvira Noriega, Forney, TX (US);
Billy Alan Wofford, Dallas, TX (US);
Asadd M. Hosein, Plano, TX (US);
Binghua Hu, Plano, TX (US);
Xinfen Chen, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.