The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 18, 2011
Yu-ren Wang, Tainan, TW;
Te-lin Sun, Kaohsiung, TW;
Szu-hao Lai, Kaohsiung, TW;
Po-chun Chen, Tainan, TW;
Chih-hsun Lin, Ping-Tung County, TW;
Che-nan Tsai, Tainan, TW;
Chun-ling Lin, Tainan, TW;
Chiu-hsien Yeh, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Te-Lin Sun, Kaohsiung, TW;
Szu-Hao Lai, Kaohsiung, TW;
Po-Chun Chen, Tainan, TW;
Chih-Hsun Lin, Ping-Tung County, TW;
Che-Nan Tsai, Tainan, TW;
Chun-Ling Lin, Tainan, TW;
Chiu-Hsien Yeh, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.