The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 29, 2012
Sukchul Bang, Yongin-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Byung Lyul Park, Seoul, KR;
Dosun Lee, Gwangju, KR;
Deok-young Jung, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Sukchul Bang, Yongin-si, KR;
Kwangjin Moon, Hwaseong-si, KR;
Byung Lyul Park, Seoul, KR;
Dosun Lee, Gwangju, KR;
Deok-Young Jung, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.