The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Mar. 24, 2011
Chun-yuan Wu, Yunlin County, TW;
Chin-cheng Chien, Tainan, TW;
Chiu-hsien Yeh, Tainan, TW;
Yeng-peng Wang, Kaohsiung, TW;
Chun-Yuan Wu, Yunlin County, TW;
Chin-Cheng Chien, Tainan, TW;
Chiu-Hsien Yeh, Tainan, TW;
Yeng-Peng Wang, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a metal gate is provided. First, a dummy material is formed to completely cover a substrate. Second, a dopant is selectively implanted into the dummy material. Then, some of the dummy material is removed to expose part of the substrate and to form a dummy gate including a dopant region disposed between a first region and a second region. Later an interlayer dielectric layer is formed to surround the dummy gate. Next, a selective etching step is carried out to remove the first region to form a recess without substantially removing the dopant region. Afterwards, the recess is filled with a material set to form a metal gate.