The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
May. 27, 2011
Mi-ra Park, Seoul, KR;
Kyoung-mi Kim, Anyang-si, KR;
Jeong-ju Park, Hwaseong-si, KR;
Bo-hee Lee, Gunpo-si, KR;
Jae-ho Kim, Yongin-si, KR;
Young-ho Kim, Yongin-si, KR;
Mi-Ra Park, Seoul, KR;
Kyoung-Mi Kim, Anyang-si, KR;
Jeong-Ju Park, Hwaseong-si, KR;
Bo-Hee Lee, Gunpo-si, KR;
Jae-Ho Kim, Yongin-si, KR;
Young-Ho Kim, Yongin-si, KR;
Abstract
A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.