The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Aug. 25, 2010
Applicants:
Makoto Urushihara, Naka-gun, JP;
Kazuki Mizushima, Saitama, JP;
Inventors:
Makoto Urushihara, Naka-gun, JP;
Kazuki Mizushima, Saitama, JP;
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.