The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
May. 07, 2009
Fumio Tahara, Annaka, JP;
Tsuyoshi Ohtsuki, Annaka, JP;
Takatoshi Nagoya, Annaka, JP;
Kiyoshi Mitani, Annaka, JP;
Fumio Tahara, Annaka, JP;
Tsuyoshi Ohtsuki, Annaka, JP;
Takatoshi Nagoya, Annaka, JP;
Kiyoshi Mitani, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.