The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jul. 06, 2011
Chi-cheng Huang, Kaohsiung, TW;
Ping-chia Shih, Tainan, TW;
Chih-ming Wang, Tainan, TW;
Chun-sung Huang, Changhua County, TW;
Hsiang-chen Lee, Kaohsiung, TW;
Chih-hung Lin, Hsinchu, TW;
Yau-kae Sheu, Hsinchu, TW;
Chi-Cheng Huang, Kaohsiung, TW;
Ping-Chia Shih, Tainan, TW;
Chih-Ming Wang, Tainan, TW;
Chun-Sung Huang, Changhua County, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Chih-Hung Lin, Hsinchu, TW;
Yau-Kae Sheu, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate.