The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

May. 27, 2011
Applicants:

Federica Zanderigo, Milan, IT;

Andrea P. Marchelli, Nizza Monferrato, IT;

Fabio Pellizzer, Cornate D'Adda, IT;

Inventors:

Federica Zanderigo, Milan, IT;

Andrea P. Marchelli, Nizza Monferrato, IT;

Fabio Pellizzer, Cornate D'Adda, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Resistance variable memory cells and methods are described herein. One or more methods of forming a resistance variable memory cell include forming a silicide material on a terminal of a select device associated with the resistance variable memory cell, forming a modified region of the silicide material by modifying a resistivity of a region of the silicide material, forming a conductive element on at least a portion of the modified region, and forming a resistance variable material on the conductive element.


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