The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jun. 09, 2011
Eli Harari, Saratoga, CA (US);
Tuan Pham, San Jose, CA (US);
Yupin Fong, Fremont, CA (US);
Vinod Robert Purayath, Santa Clara, CA (US);
Eli Harari, Saratoga, CA (US);
Tuan Pham, San Jose, CA (US);
Yupin Fong, Fremont, CA (US);
Vinod Robert Purayath, Santa Clara, CA (US);
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation can be provided, at least in part, by bit line air gaps that are elongated in a column direction and/or word line air gaps that are elongated in a row direction. The bit line air gaps may be formed in the substrate, extending between adjacent active areas of the substrate, as well as above the substrate surface, extending between adjacent columns of non-volatile storage elements. The word line air gaps may be formed above the substrate surface, extending between adjacent rows of non-volatile storage elements.