The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jul. 25, 2011
Chih-ming Wang, Tainan, TW;
Ping-chia Shih, Tainan, TW;
Chun-sung Huang, Changhua County, TW;
Chi-cheng Huang, Kaohsiung, TW;
Hsiang-chen Lee, Kaohsiung, TW;
Chih-hung Lin, Hsinchu, TW;
Yau-kae Sheu, Hsinchu, TW;
Chih-Ming Wang, Tainan, TW;
Ping-Chia Shih, Tainan, TW;
Chun-Sung Huang, Changhua County, TW;
Chi-Cheng Huang, Kaohsiung, TW;
Hsiang-Chen Lee, Kaohsiung, TW;
Chih-Hung Lin, Hsinchu, TW;
Yau-Kae Sheu, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening.