The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Nov. 28, 2008
Applicants:

Shinsuke Fujiwara, Itami, JP;

Hiroaki Yoshida, Itami, JP;

Inventors:

Shinsuke Fujiwara, Itami, JP;

Hiroaki Yoshida, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cmand, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×10cmto 3×10cm, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.


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