The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Sep. 08, 2011
Applicants:
Jung-tang Chu, Zhunan Township, TW;
Ching-hua Chiu, Hsinchu, TW;
Hung-wen Huang, Hsinchu, TW;
Yea-chen Lee, Zhubei, TW;
Hsing-kuo Hsia, Jhubei, TW;
Inventors:
Jung-Tang Chu, Zhunan Township, TW;
Ching-Hua Chiu, Hsinchu, TW;
Hung-Wen Huang, Hsinchu, TW;
Yea-Chen Lee, Zhubei, TW;
Hsing-Kuo Hsia, Jhubei, TW;
Assignee:
TSMC Solid State Lighting Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/20 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
Abstract
A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.