The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Mar. 02, 2009
Applicants:
Kenji Fujito, Ibaraki, JP;
Shuichi Kubo, Ibaraki, JP;
Yoko Mashige, Kanagawa, JP;
Inventors:
Assignee:
Mitsubishi Chemical Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); C30B 25/00 (2006.01); C30B 23/00 (2006.01); C01B 21/06 (2006.01);
U.S. Cl.
CPC ...
C30B 25/00 (2013.01); C30B 23/00 (2013.01); C30B 25/02 (2013.01); C01B 21/06 (2013.01);
Abstract
A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.