The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2013

Filed:

Sep. 22, 2011
Applicants:

Shih-hung Chen, Jhudong Township, Hsinchu County, TW;

Yan-ru Chen, Hsinchu, TW;

Lo-yueh Lin, Yilan County, TW;

Inventors:

Shih-Hung Chen, Jhudong Township, Hsinchu County, TW;

Yan-Ru Chen, Hsinchu, TW;

Lo-Yueh Lin, Yilan County, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
Abstract

An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers.


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