The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Jun. 26, 2012
Applicants:
Yifeng Wu, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Primit Parikh, Goleta, CA (US);
Ilan Ben-yaacov, Goleta, CA (US);
Inventors:
Yifeng Wu, Goleta, CA (US);
Umesh Mishra, Montecito, CA (US);
Primit Parikh, Goleta, CA (US);
Ilan Ben-Yaacov, Goleta, CA (US);
Assignee:
Transphorm Inc., Goleta, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2 DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2 DEG, forming an ohmic contact with the layer containing the 2 DEG.