The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Jan. 28, 2009
Akira Bando, Hiki-gun, JP;
Hiroshi Amano, Nagoya, JP;
Akira Bando, Hiki-gun, JP;
Hiroshi Amano, Nagoya, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate () for growing an epitaxial film; and an ELO layer () having a composition of AlGaN (0≦x≦1) formed either on top of the substrate () or on top of a group III nitride layer () formed on top of the substrate (), wherein the ELO layer () is a layer formed by using a mask pattern (), which is composed of carbon and is formed either on top of the substrate () or on top of the group III nitride layer ().