The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Apr. 26, 2010
Applicants:
Seiichi Kirii, Taki-gun, JP;
Teruhisa Kitagawa, Suzuka, JP;
Inventors:
Seiichi Kirii, Taki-gun, JP;
Teruhisa Kitagawa, Suzuka, JP;
Assignee:
Mitsubishi Materials Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
Quick Actions:
Kirii, Seiichi. (2013). Polycrystalline silicon reactor (U.S. Patent No. 8540818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8540818
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile