The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

May. 03, 2011
Applicants:

Chun Shiah, Hsinchu, TW;

Hao-jan Yang, Yunlin County, TW;

Ching-ying Hsu, Hsinchu County, TW;

Inventors:

Chun Shiah, Hsinchu, TW;

Hao-Jan Yang, Yunlin County, TW;

Ching-Ying Hsu, Hsinchu County, TW;

Assignee:

Etron Technology, Inc., Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 19/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor.


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