The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Nov. 29, 2010
Ann Witvrouw, Herent, BE;
Luc Haspeslagh, Lubbeek-Linden, BE;
Bin Guo, Leuven, BE;
Simone Severi, Leuven, BE;
Gert Claes, Kessel-lo, BE;
Ann Witvrouw, Herent, BE;
Luc Haspeslagh, Lubbeek-Linden, BE;
Bin Guo, Leuven, BE;
Simone Severi, Leuven, BE;
Gert Claes, Kessel-lo, BE;
IMEC, Leuven, BE;
Katholieke Universiteit Leuven, K.U. Leuven R&D, Leuven, BE;
Abstract
A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed.