The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Sep. 21, 2011
Teng-hao Yeh, Hsinchu, TW;
Shian-hau Liao, Taichung, TW;
Chia-hui Chen, Taichung, TW;
Sung-shan Tai, San Jose, CA (US);
Teng-Hao Yeh, Hsinchu, TW;
Shian-Hau Liao, Taichung, TW;
Chia-Hui Chen, Taichung, TW;
Sung-Shan Tai, San Jose, CA (US);
Sinopower Semiconductor Inc., Hsinchu Science Park, Hsinchu, TW;
Abstract
The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.