The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Oct. 12, 2010
Applicant:
Kazuo Ogawa, Chuo-ku, JP;
Inventor:
Kazuo Ogawa, Chuo-ku, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A vertical transistor comprises a semiconductor region, a pillar region formed on the semiconductor region, a gate insulating film formed so as to cover a side surface of the pillar region, a gate electrode formed on the gate insulating film, a first impurity diffusion region formed in an upper portion of the pillar region, and a second impurity diffusion region formed in the semiconductor region so as to surround the pillar region. The first impurity diffusion region is formed so as to be spaced from the side surface of the pillar region.