The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Sep. 26, 2007
Applicants:
Krishnaswamy Ramkumar, San Jose, CA (US);
Fredrick B. Jenne, Los Gatos, CA (US);
William W. Koutny, Santa Clara, CA (US);
Inventors:
Krishnaswamy Ramkumar, San Jose, CA (US);
Fredrick B. Jenne, Los Gatos, CA (US);
William W. Koutny, Santa Clara, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.