The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8536640 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 17, 2013

Filed:

Sep. 26, 2007
Applicants:

Krishnaswamy Ramkumar, San Jose, CA (US);

Fredrick B. Jenne, Los Gatos, CA (US);

William W. Koutny, Santa Clara, CA (US);

Inventors:

Krishnaswamy Ramkumar, San Jose, CA (US);

Fredrick B. Jenne, Los Gatos, CA (US);

William W. Koutny, Santa Clara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.


Find Patent Forward Citations

Ramkumar, Krishnaswamy. (2013). Deuterated film encapsulation of nonvolatile charge trap memory device (U.S. Patent No. 8536640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8536640

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