The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
May. 11, 2012
Applicants:
Chien-an Yu, Taipei, TW;
Yuan-sung Chang, New Taipei, TW;
Feng-ling Chen, Taoyuan County, TW;
Chun-hung Chien, Taipei, TW;
Inventors:
Chien-An Yu, Taipei, TW;
Yuan-Sung Chang, New Taipei, TW;
Feng-Ling Chen, Taoyuan County, TW;
Chun-Hung Chien, Taipei, TW;
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure includes a semiconductor substrate having thereon a plurality of deep trenches and a plurality of pillar structures between the deep trenches, wherein each of the plurality of pillar structures comprises an upper portion and a lower portion. A doping region is formed in the lower portion. A diffusion barrier layer is disposed on a sidewall of the lower portion.