The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Oct. 15, 2010
Sven Beyer, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Uwe Griebenow, Markkleeberg, DE;
Thilo Scheiper, Dresden, DE;
Sven Beyer, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Uwe Griebenow, Markkleeberg, DE;
Thilo Scheiper, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In a process strategy for forming high-k metal gate electrode structures in an early manufacturing phase, a predoped semiconductor material may be used in order to reduce the Schottky barrier between the semiconductor material and the conductive cap material of the gate electrode structures. Due to the substantially uniform material characteristics of the predoped semiconductor material, any patterning-related non-uniformities during the complex patterning process of the gate electrode structures may be reduced. The predoped semiconductor material may be used for gate electrode structures of complementary transistors.