The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jan. 31, 2012
Masaru Kadoshima, Kanagawa, JP;
Hiroshi Umeda, Kanagawa, JP;
Tatsunori Kaneoka, Kanagawa, JP;
Katsuyuki Horita, Kanagawa, JP;
Masaru Kadoshima, Kanagawa, JP;
Hiroshi Umeda, Kanagawa, JP;
Tatsunori Kaneoka, Kanagawa, JP;
Katsuyuki Horita, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A polysilazane film is formed over the main surface of a semiconductor substrate in such a manner that the upper surface level of the polysilazane film buried in a trench of 0.2 μm or less in width becomes higher than that of a pad insulating film and the upper surface level of the polysilazane film buried in a trench of 1.0 μm or more in width becomes lower than that of the pad insulating film. Then, heat treatment is conducted at 300° C. or more to convert the polysilazane film into a first buried film made of silicon oxide (SiO) and remove a void in the upper portion of the narrower trench.