The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Oct. 12, 2010
Applicants:
Lahir Adam, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Sanjay Mehta, Albany, NY (US);
Zhengmao Zhu, Hopewell Junction, NY (US);
Inventors:
Lahir Adam, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Sanjay Mehta, Albany, NY (US);
Zhengmao Zhu, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.