The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 09, 2010
Fung Ka Hing, Hsinchu, TW;
Haiting Wang, Hsinchu, TW;
Han-ting Tsai, Kaoshiung, TW;
Chun-fai Cheng, Hsinchu, TW;
Wei-yuan LU, Taipei, TW;
Hsien-ching Lo, Taoyuan, TW;
Kuan-chung Chen, Taipei, TW;
Fung Ka Hing, Hsinchu, TW;
Haiting Wang, Hsinchu, TW;
Han-Ting Tsai, Kaoshiung, TW;
Chun-Fai Cheng, Hsinchu, TW;
Wei-Yuan Lu, Taipei, TW;
Hsien-Ching Lo, Taoyuan, TW;
Kuan-Chung Chen, Taipei, TW;
Abstract
The present disclosure discloses an exemplary method for fabricating a gate structure comprising depositing and patterning a dummy oxide layer and a dummy gate electrode layer on a substrate; surrounding the dummy oxide layer and the dummy gate electrode layer with a sacrificial layer; surrounding the sacrificial layer with a nitrogen-containing dielectric layer; surrounding the nitrogen-containing dielectric layer with an interlayer dielectric layer; removing the dummy gate electrode layer; removing the dummy oxide layer; removing the sacrificial layer to form an opening in the nitrogen-containing dielectric layer; and depositing a gate dielectric; and depositing a gate electrode.