The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Dec. 06, 2011
Norikazu Mizuno, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Masayuki Asai, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Masayuki Asai, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.