The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Mar. 28, 2012
Hisanori Aikawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Masahiko Nakayama, Yokohama, JP;
Sumio Ikegawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Eiji Kitagawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Jyunichi Ozeki, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Satoshi Yanagi, Kawasaki, JP;
Hisanori Aikawa, Yokohama, JP;
Tadashi Kai, Tokyo, JP;
Masahiko Nakayama, Yokohama, JP;
Sumio Ikegawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Eiji Kitagawa, Yokohama, JP;
Tatsuya Kishi, Yokohama, JP;
Jyunichi Ozeki, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Satoshi Yanagi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm.