The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Feb. 28, 2008
Kazuyoshi Inoue, Chiba, JP;
Koki Yano, Chiba, JP;
Masashi Kasami, Chiba, JP;
Idemitsu Kosan Co., Ltd, Tokyo, JP;
Abstract
To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes. A field-effect thin film transistorincludes a gate electrode, an active layer, a source electrodeand a drain electrode, wherein a crystalline oxidecontaining indium and having an electron carrier concentration of less than 10/cmis used as the active layer, and the gate electrodeis in self-alignment with the source electrodeand the drain electrodeThe crystalline oxidecontains a positive trivalent element different from a positive divalent element or indium.