The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Jun. 16, 2011
Yong-soon Choi, Yongin-si, KR;
Jun-won Lee, Asan-si, KR;
Gil-heyun Choi, Seoul, KR;
Eun-kee Hong, Seongnam-si, KR;
Hong-gun Kim, Suwon-si, KR;
Ha-young Yi, Seongnam-si, KR;
Yong-Soon Choi, Yongin-si, KR;
Jun-Won Lee, Asan-si, KR;
Gil-Heyun Choi, Seoul, KR;
Eun-Kee Hong, Seongnam-si, KR;
Hong-Gun Kim, Suwon-si, KR;
Ha-Young Yi, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.