The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Nov. 25, 2008
Brian Douglas Reid, Plano, TX (US);
James David Bernstein, Plano, TX (US);
Hongyu Yue, Plano, TX (US);
Howie Hui Yang, Carrollton, TX (US);
Mark Boehm, Wylie, TX (US);
Brian Douglas Reid, Plano, TX (US);
James David Bernstein, Plano, TX (US);
Hongyu Yue, Plano, TX (US);
Howie Hui Yang, Carrollton, TX (US);
Mark Boehm, Wylie, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for semiconductor processing is provided, wherein a semiconductor wafer having undergone polishing is provided. The semiconductor wafer has an active region positioned between one or more moat regions, wherein the one or more moat regions have an oxide disposed therein. A top surface of the active region is recessed from a top surface of the moat region, therein defining a step having a step height associated therewith. A step height is measured, and a photoresist is formed over the semiconductor wafer. A modeled step height is further determined, wherein the modeled step height is based on the measured step height and a desired critical dimension of the photoresist. A dosage of energy is determined for patterning the photoresist, wherein the determination of the dosage of energy is based, at least in part, on the modeled step height. The photoresist is then patterned using the determined dosage of energy.