The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jun. 17, 2010
Tsung-yi Huang, Hsinchu, TW;
Ying-shiou Lin, Zhubei, TW;
Tsung-Yi Huang, Hsinchu, TW;
Ying-Shiou Lin, Zhubei, TW;
Richtek Technology Corporation, R.O.C., Hsin-Chu, TW;
Abstract
The present invention discloses a method for controlling the impurity density distribution in semiconductor device and a semiconductor device made thereby. The control method includes the steps of: providing a substrate; defining a doped area which includes at least one first region; partially masking the first region by a mask pattern; and doping impurities in the doped area to form one integrated doped region in the first region, whereby the impurity concentration of the first region is lower than a case where the first region is not masked by the mask pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile