The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8525198 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 03, 2013

Filed:

Aug. 26, 2009
Applicants:

Yue Hao, Shaanxi, CN;

Ling Yang, Shaanxi, CN;

Xiaohua MA, Shaanxi, CN;

Xiaowei Zhou, Shaanxi, CN;

Peixian LI, Shaanxi, CN;

Inventors:

Yue Hao, Shaanxi, CN;

Ling Yang, Shaanxi, CN;

Xiaohua Ma, Shaanxi, CN;

Xiaowei Zhou, Shaanxi, CN;

Peixian Li, Shaanxi, CN;

Assignee:

Xidian University, Xi'an, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.


Find Patent Forward Citations

Hao, Yue. (2013). Ultraviolet light emitting diode devices and methods for fabricating the same (U.S. Patent No. 8525198). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8525198

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