The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Sep. 21, 2011
Sang-hoon Ahn, Hwaseong-si, KR;
Byung-hee Kim, Seocho-gu, KR;
Sang-don Nam, Gangnam-gu, KR;
Kyu-hee Han, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
Jang-hee Lee, Yongin-si, KR;
Jong-min Baek, Suwon-si, KR;
Kyoung-hee Kim, Seo-gu, KR;
Sang-Hoon Ahn, Hwaseong-si, KR;
Byung-Hee Kim, Seocho-gu, KR;
Sang-Don Nam, Gangnam-gu, KR;
Kyu-Hee Han, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
Jang-Hee Lee, Yongin-si, KR;
Jong-Min Baek, Suwon-si, KR;
Kyoung-Hee Kim, Seo-gu, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile