The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Dec. 28, 2011
Koji Uematsu, Itami, JP;
Hideki Osada, Itami, JP;
Seiji Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Koji Uematsu, Itami, JP;
Hideki Osada, Itami, JP;
Seiji Nakahata, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substratesandhaving a main plane from a group III nitride bulk crystal, the main planesandhaving a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substratesandadjacent to each other such that the main planesandof the substratesandare parallel to each other and each [0001] direction of the substratesandcoincides with each other, and growing a group III nitride crystalon the main planesandof the substratesand