The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Sep. 13, 2011
Andreas Kurz, Dresden, DE;
Maciej Wiatr, Dresden, DE;
Andreas Kurz, Dresden, DE;
Maciej Wiatr, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Post programming resistance of a semiconductor fuse is enhanced by using an implantation to form an amorphous silicon layer and to break up an underlying high-κ/metal gate. Embodiments include forming a shallow trench isolation (STI) region in a silicon substrate, forming a high-κ dielectric layer on the STI region, forming a metal gate on the high-κ dielectric layer, forming a polysilicon layer over the metal gate, performing an implantation to convert the polysilicon layer into an amorphous silicon layer, wherein the implantation breaks up the metal gate, and forming a silicide on the amorphous silicon layer. By breaking up the metal gate, electrical connection of the fuse contacts through the metal gate is eliminated.