The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Sep. 15, 2009
Applicants:
Wei-e Wang, Overijse, BE;
Han Chung Lin, Leuven, BE;
Marc Meuris, Keerbergen, BE;
Inventors:
Assignee:
IMEC, Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method to reduce (avoid) Fermi Level Pinning (FLP) in high mobility semiconductor compound channel such as Ge and III-V compounds (e.g. GaAs or InGaAs) in a Metal Oxide Semiconductor (MOS) device. The method is using atomic hydrogen which passivates the interface of the high mobility semiconductor compound with the gate dielectric and further repairs defects. The methods further improve the MOS device characteristics such that a MOS device with a quantum well is created.