The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Feb. 21, 2011
Katsuhiro Yamazaki, Yokohama, JP;
Katsuhiro Yamazaki, Yokohama, JP;
Shibaura Mechatronics Corporation, Kanagawa, JP;
Abstract
An ashing device and ashing method that can positively remove resist from a wafer while preventing degradation of the film material properties of exposed porous Low-K film on the wafer. The ashing device of the present invention introduces a gas to a dielectric plasma generating chamber, excites said gas to generate a plasma, and performs plasma processing using said gas plasma on a processing work S in use of a Low-K film. The ashing gas introduced from a gas regulatoris an inert gas to which Hhas been added. The configuration is formed so that plasma is generated from the gas blend, and the resist is removed by the hydrogen radicals generated.