The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Dec. 08, 2009
Eric R. Fossum, Wolfeboro, NH (US);
Young Gu Jin, Hwasung-si, KR;
Soo Jung Hwang, Gyeonggi-do, KR;
Dae Kil Cha, Suncheon-si, KR;
Yoon Dong Park, Yongin-si, KR;
Jung Chak Ahn, Yongin-si, KR;
Kyoung Sik Moon, Gyeonggi-do, KR;
Eric R. Fossum, Wolfeboro, NH (US);
Young Gu Jin, Hwasung-si, KR;
Soo Jung Hwang, Gyeonggi-do, KR;
Dae Kil Cha, Suncheon-si, KR;
Yoon Dong Park, Yongin-si, KR;
Jung Chak Ahn, Yongin-si, KR;
Kyoung Sik Moon, Gyeonggi-do, KR;
Abstract
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.