The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Aug. 14, 2008
Tuung Luoh, Hsinchu, TW;
Chin-ta Su, Hsinchu, TW;
Ta-hung Yang, Hsinchu, TW;
Kuang-chao Chen, Hsinchu, TW;
Tuung Luoh, Hsinchu, TW;
Chin-Ta Su, Hsinchu, TW;
Ta-Hung Yang, Hsinchu, TW;
Kuang-Chao Chen, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier layer is formed over the second conductive layer.