The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Feb. 04, 2013
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Edward Yi Chang, Hsinchu County, TW;
Yueh-Chin Lin, Hsinchu, TW;
Assignee:
National Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.